onsemi NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 145-3284
- Référence fabricant:
- NGTB25N120FL3WG
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 tube de 30 unités)*
124,95 €
(TVA exclue)
151,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 30 unité(s) expédiée(s) à partir du 25 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 90 | 4,165 € | 124,95 € |
| 120 - 240 | 3,332 € | 99,96 € |
| 270 - 480 | 3,149 € | 94,47 € |
| 510 - 990 | 3,021 € | 90,63 € |
| 1020 + | 2,946 € | 88,38 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 145-3284
- Référence fabricant:
- NGTB25N120FL3WG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 349 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.25 x 5.3 x 21.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 3085pF | |
| Maximum Operating Temperature | +175 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 349 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 16.25 x 5.3 x 21.4mm | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 3085pF | ||
Maximum Operating Temperature +175 °C | ||
- Pays d'origine :
- CN
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Liens connexes
- onsemi NGTB25N120FL3WG IGBT 3-Pin TO-247, Through Hole
- onsemi FGY4L100T120SWD Common Emitter IGBT 4-Pin TO-247-4L, Through Hole
- onsemi FGH40T120SMD IGBT 3-Pin TO-247, Through Hole
- onsemi NGTB40N120FLWG IGBT 3-Pin TO-247, Through Hole
- onsemi FGH4L40T120LQD IGBT, 80 A 1200 V TO-247
- Infineon IGW60T120FKSA1 IGBT 3-Pin TO-247, Through Hole
- IXYS IXYH50N120C3 IGBT 3-Pin TO-247, Through Hole
- onsemi FGH40T120SQDNL4 160 A 1200 V Through Hole