onsemi NGTB25N120FL3WG, Type N-Channel IGBT-Ultra Field Stop, 25 A 1200 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 123-8830
- Référence fabricant:
- NGTB25N120FL3WG
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
12,68 €
(TVA exclue)
15,34 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 66 unité(s) expédiée(s) à partir du 24 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 6,34 € | 12,68 € |
| 20 + | 5,465 € | 10,93 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 123-8830
- Référence fabricant:
- NGTB25N120FL3WG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Maximum Continuous Collector Current Ic | 25A | |
| Product Type | IGBT-Ultra Field Stop | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 349W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.25 mm | |
| Length | 20.8mm | |
| Standards/Approvals | RoHS | |
| Series | Field Stop | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Maximum Continuous Collector Current Ic 25A | ||
Product Type IGBT-Ultra Field Stop | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 349W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Width 16.25 mm | ||
Length 20.8mm | ||
Standards/Approvals RoHS | ||
Series Field Stop | ||
Automotive Standard No | ||
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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