onsemi NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 163-0258
- Référence fabricant:
- NGTB35N65FL2WG
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 tube de 30 unités)*
107,52 €
(TVA exclue)
130,11 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 20 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 90 | 3,584 € | 107,52 € |
| 120 - 240 | 2,857 € | 85,71 € |
| 270 - 480 | 2,706 € | 81,18 € |
| 510 - 990 | 2,56 € | 76,80 € |
| 1020 + | 2,264 € | 67,92 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 163-0258
- Référence fabricant:
- NGTB35N65FL2WG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Maximum Continuous Collector Current | 70 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 300 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.26 x 5.3 x 21.08mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Maximum Continuous Collector Current 70 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 300 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 16.26 x 5.3 x 21.08mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
- Pays d'origine :
- CN
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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