onsemi, Type N-Channel IGBT-Field Stop II, 70 A 650 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 163-0258
- Référence fabricant:
- NGTB35N65FL2WG
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 30 unités)*
113,88 €
(TVA exclue)
137,79 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 30 unité(s) expédiée(s) à partir du 14 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 90 | 3,796 € | 113,88 € |
| 120 - 240 | 3,026 € | 90,78 € |
| 270 - 480 | 2,866 € | 85,98 € |
| 510 - 990 | 2,71 € | 81,30 € |
| 1020 + | 2,399 € | 71,97 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 163-0258
- Référence fabricant:
- NGTB35N65FL2WG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | IGBT-Field Stop II | |
| Maximum Continuous Collector Current Ic | 70A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 300W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 16.25mm | |
| Series | Field Stop | |
| Length | 20.8mm | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type IGBT-Field Stop II | ||
Maximum Continuous Collector Current Ic 70A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 300W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 16.25mm | ||
Series Field Stop | ||
Length 20.8mm | ||
Height 5.3mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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