onsemi, Type N-Channel IGBT-Field Stop II, 70 A 650 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 163-0258
- Référence fabricant:
- NGTB35N65FL2WG
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 tube de 30 unités)*
107,52 €
(TVA exclue)
130,11 €
(TVA incluse)
Ajouter 30 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 22 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 90 | 3,584 € | 107,52 € |
| 120 - 240 | 2,857 € | 85,71 € |
| 270 - 480 | 2,706 € | 81,18 € |
| 510 - 990 | 2,56 € | 76,80 € |
| 1020 + | 2,264 € | 67,92 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 163-0258
- Référence fabricant:
- NGTB35N65FL2WG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Maximum Continuous Collector Current Ic | 70A | |
| Product Type | IGBT-Field Stop II | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 300W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | Field Stop | |
| Length | 20.8mm | |
| Height | 5.3mm | |
| Width | 16.25 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Maximum Continuous Collector Current Ic 70A | ||
Product Type IGBT-Field Stop II | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 300W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series Field Stop | ||
Length 20.8mm | ||
Height 5.3mm | ||
Width 16.25 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Liens connexes
- onsemi NGTB35N65FL2WG IGBT 3-Pin TO-247, Through Hole
- onsemi NGTB40N65FL2WG IGBT 3-Pin TO-247, Through Hole
- onsemi AFGHL40T65SPD IGBT 3-Pin TO-247, Through Hole
- onsemi FGH75T65SHDTL4 IGBT 4-Pin TO-247, Through Hole
- onsemi FGHL50T65SQ IGBT 3-Pin TO-247, Through Hole
- onsemi FGHL75T65MQDTL4 IGBT, 80 A 650 V TO-247-4LD
- onsemi FGHL75T65MQDT IGBT, 80 A 650 V TO-247-3L
- onsemi FGH4L50T65SQD IGBT, 80 A 650 V TO-247-4LD