Infineon IKW40N65H5FKSA1, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 110-7779
- Référence fabricant:
- IKW40N65H5FKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 4 unités)*
16,18 €
(TVA exclue)
19,576 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 03 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 4 - 16 | 4,045 € | 16,18 € |
| 20 - 36 | 3,68 € | 14,72 € |
| 40 - 96 | 3,44 € | 13,76 € |
| 100 - 196 | 3,198 € | 12,79 € |
| 200 + | 2,953 € | 11,81 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 110-7779
- Référence fabricant:
- IKW40N65H5FKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | JEDEC, RoHS | |
| Automotive Standard | No | |
| Energy Rating | 0.51mJ | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Standards/Approvals JEDEC, RoHS | ||
Automotive Standard No | ||
Energy Rating 0.51mJ | ||
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Liens connexes
- Infineon IKW40N65H5FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IHW40N65R5XKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IGW40N65F5FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW50N65ES5XKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IGW50N65H5FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW30N65ES5XKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW75N65ES5XKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW75N65EL5XKSA1 IGBT 3-Pin TO-247, Through Hole