Infineon IKWH40N65WR6XKSA1, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 232-6740
- Référence fabricant:
- IKWH40N65WR6XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
5,62 €
(TVA exclue)
6,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 138 unité(s) expédiée(s) à partir du 16 mars 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 2,81 € | 5,62 € |
| 20 - 48 | 2,50 € | 5,00 € |
| 50 - 98 | 2,33 € | 4,66 € |
| 100 - 198 | 2,165 € | 4,33 € |
| 200 + | 2,02 € | 4,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 232-6740
- Référence fabricant:
- IKWH40N65WR6XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 175W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Series | IKWH40N65WR6 | |
| Width | 16.13 mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 21.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 175W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Series IKWH40N65WR6 | ||
Width 16.13 mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 21.1mm | ||
Automotive Standard No | ||
The Infineon's 40 A reverse conducting TRENCHSTOP 5 WR6 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creep age distances.
Monolithically integrated diode
Lowest switching losses
Improved reliability against package contamination
Liens connexes
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