Infineon IKY150N65EH7XKSA1, Type N-Channel IGBT, 160 A 650 V, 4-Pin PG-TO-247-4-PLUS-NN5.1, Through Hole

This IGBT is a high-power switching transistor designed for through-hole mounting in power electronic assemblies. It operates as an N-channel device suitable for switching and amplification tasks in industrial power stages, providing robust voltage handling and elevated temperature endurance for demanding operating contexts.

• 650V collector-emitter rating enables high-voltage switching capability
• 160A continuous collector current supports heavy-duty load handling
• 621W maximum power dissipation permits sustained high-power operation
• ±20V gate-emitter limit ensures defined drive voltage margins
• 40°C to 175°C operating range withstands elevated temperature environments
• Four-pin PG-TO-247-4-PLUS package facilitates secure electrical connections

• Suitable for motor drive inverter power stages
• Ideal for industrial UPS and power conversion units
• Used with high-voltage switching power supplies
• Can be used for welding and induction-heating power modules
• Appropriate for renewable-energy inverter converters

It is intended for through‑hole installation, providing mechanical stability and straightforward heat-sink attachment.

The PG-TO-247-4-PLUS package format allows direct heat‑sink coupling to manage the 621W dissipation under appropriate cooling conditions.

The device uses a four‑pin arrangement to separate control and power connections, simplifying wiring for gate drive and collector-emitter paths.

It is not classified as an automotive‑standard component and should be selected accordingly for vehicle applications.