Infineon IKY150N65EH7XKSA1, Type N-Channel IGBT, 160 A 650 V, 4-Pin PG-TO-247-4-PLUS-NN5.1, Through Hole

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Actuellement indisponible
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N° de stock RS:
285-020
Référence fabricant:
IKY150N65EH7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

160A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

621W

Package Type

PG-TO-247-4-PLUS-NN5.1

Mount Type

Through Hole

Channel Type

Type N

Pin Count

4

Minimum Operating Temperature

40°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

21.1mm

Height

5.1mm

Width

15.9 mm

Automotive Standard

No

The Infineon IGBT introduces cutting edge trench technology, optimised for low saturation voltage and reduced switching losses. It is Ideal for demanding applications, providing robust performance in industrial settings. With its Advanced construction, the device efficiently manages large current loads while maintaining excellent thermal stability. This component is particularly suited for electric vehicle charging systems and industrial UPS solutions, ensuring reliability and security in critical applications.

Supports a maximum collector emitter voltage of 650 V

Handles up to 150 A continuous current

Features a soft and fast recovery antiparallel diode

Qualified for industrial applications per JEDEC standards

Easy integration with well defined PSpice models

Smooth switching behaviour enhances system efficiency

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