Infineon BFP740ESDH6327XTSA1 RF Bipolar Transistor, 45 mA NPN, 4.2 V, 4-Pin SOT-343
- N° de stock RS:
- 273-7299
- Référence fabricant:
- BFP740ESDH6327XTSA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 3000 unités)*
756,00 €
(TVA exclue)
915,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 05 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,252 € | 756,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7299
- Référence fabricant:
- BFP740ESDH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 45mA | |
| Maximum Collector Emitter Voltage Vceo | 4.2V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Npn Rf Heterojunction Bipolar Transistor (Hbt) | |
| Maximum Collector Base Voltage VCBO | 4.9V | |
| Minimum DC Current Gain hFE | 160 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 45GHz | |
| Maximum Emitter Base Voltage VEBO | 0.5V | |
| Maximum Power Dissipation Pd | 160mW | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | BFP740ESD | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 45mA | ||
Maximum Collector Emitter Voltage Vceo 4.2V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Npn Rf Heterojunction Bipolar Transistor (Hbt) | ||
Maximum Collector Base Voltage VCBO 4.9V | ||
Minimum DC Current Gain hFE 160 | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 45GHz | ||
Maximum Emitter Base Voltage VEBO 0.5V | ||
Maximum Power Dissipation Pd 160mW | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals JEDEC47/20/22 | ||
Series BFP740ESD | ||
Automotive Standard No | ||
The Infineon NPN RF bipolar transistor is a wideband NPN RF heterojunction bipolar transistor with an integrated ESD protection. It is suitable for multimedia applications such as portable TV, CATV and FM radio and ISM applications like RKE, AMR and ZigBee, as well as for emerging wireless applications.
High gain
Robustness
High end RF performance
Suitable for wireless communications
Suitable for satellite communication systems
Liens connexes
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