Infineon BFP842ESDH6327XTSA1 RF Bipolar Transistor, 40 mA NPN, 3.25 V, 4-Pin SOT-343
- N° de stock RS:
- 170-2366
- Référence fabricant:
- BFP842ESDH6327XTSA1
- Fabricant:
- Infineon
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 170-2366
- Référence fabricant:
- BFP842ESDH6327XTSA1
- Fabricant:
- Infineon
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 3.25V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 4.1V | |
| Maximum Power Dissipation Pd | 120mW | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 57GHz | |
| Maximum Emitter Base Voltage VEBO | 4.1V | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.1mm | |
| Height | 1.3mm | |
| Series | BFP842ESD | |
| Width | 1.25mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 3.25V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 4.1V | ||
Maximum Power Dissipation Pd 120mW | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 57GHz | ||
Maximum Emitter Base Voltage VEBO 4.1V | ||
Minimum Operating Temperature -55°C | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Length 2.1mm | ||
Height 1.3mm | ||
Series BFP842ESD | ||
Width 1.25mm | ||
Standards/Approvals JEDEC47/20/22 | ||
The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application.
Robust very low noise amplifier based on Infineon's reliable, high volume
SiGe:C technology
Unique combination of high end RF performance and robustness
High linearity
High transition frequency
Transducer gain
Ideal for low voltage applications
Low power consumption, ideal for mobile applications
Easy to use Pb free and halogen free industry standard package with visible leads
Liens connexes
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