Infineon BFP842ESDH6327XTSA1 Bipolar Transistor, 40 mA NPN, 3.7 V, 4-Pin SOT-343
- N° de stock RS:
- 273-2849
- Référence fabricant:
- BFP842ESDH6327XTSA1
- Fabricant:
- Infineon
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 273-2849
- Référence fabricant:
- BFP842ESDH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 3.7V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 4.1V | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 120mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 57GHz | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 3.7V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 4.1V | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 120mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 57GHz | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
The Infineon high performance RF heterojunction bipolar transistor with an integrated ESD protection suitable for 2.3 to 3.5 GHz LNA applications.
Suitable for low voltage applications
It has application in wireless communications like WLAN, WiMAX and Bluetooth
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