Infineon BFP640H6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 4.1 V, 4-Pin SOT-343
- N° de stock RS:
- 259-1442
- Numéro d'article Distrelec:
- 304-40-488
- Référence fabricant:
- BFP640H6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 25 unités)*
7,25 €
(TVA exclue)
8,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 5 200 unité(s) expédiée(s) à partir du 26 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 100 | 0,29 € | 7,25 € |
| 125 - 225 | 0,232 € | 5,80 € |
| 250 - 600 | 0,218 € | 5,45 € |
| 625 - 1225 | 0,204 € | 5,10 € |
| 1250 + | 0,183 € | 4,58 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 259-1442
- Numéro d'article Distrelec:
- 304-40-488
- Référence fabricant:
- BFP640H6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 4.1V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Minimum DC Current Gain hFE | 110 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 200mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 42GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Width | 2.1mm | |
| Length | 2mm | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Series | BFP | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 4.1V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Minimum DC Current Gain hFE 110 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 200mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 42GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Width 2.1mm | ||
Length 2mm | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Series BFP | ||
Automotive Standard AEC-Q101 | ||
The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.
Robust high performance low noise amplifier based on Infineon's reliable
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
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