Infineon BFP640FH6327XTSA1 NPN RF Bipolar Transistor, 50 mA NPN, 4 V, 4-Pin TSFP
- N° de stock RS:
- 216-8352
- Référence fabricant:
- BFP640FH6327XTSA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 50 unités)*
9,30 €
(TVA exclue)
11,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 2 600 unité(s) expédiée(s) à partir du 01 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 50 + | 0,186 € | 9,30 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 216-8352
- Référence fabricant:
- BFP640FH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | NPN RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 4V | |
| Package Type | TSFP | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Minimum DC Current Gain hFE | 110 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 42GHz | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Maximum Power Dissipation Pd | 200mW | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | No | |
| Series | BFP640F | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type NPN RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 4V | ||
Package Type TSFP | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Minimum DC Current Gain hFE 110 | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 42GHz | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Maximum Power Dissipation Pd 200mW | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals No | ||
Series BFP640F | ||
Automotive Standard No | ||
The Infineon BFP series is a RF bipolar transistor based on silicon germanium technology. Its transition frequency of 42 GHz and high linearity characteristics at low currents make the device suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost competitive without compromising on ease of use.
Provides outstanding performance for a wide range of wireless applications
Ideal for CDMA and WLAN applications
High maximum stable gain
Gold metallization for extra high reliability
Liens connexes
- Infineon NPN RF Bipolar Transistor 4 V, 4-Pin TSFP
- Infineon RF Bipolar Transistor 10 V, 4-Pin TSFP-4-1
- Infineon BFP650FH6327XTSA1 NPN RF Bipolar Transistor 13 V, 4-Pin TSFP
- Infineon BFP520H6327XTSA1 RF Bipolar Transistor 10 V, 4-Pin TSFP-4-1
- Infineon RF Bipolar Transistor 4.5 V, 4-Pin TSFP-4-1
- Infineon RF Bipolar Transistor 13 V, 4-Pin TSFP-4-1
- Infineon RF Bipolar Transistor 4.2 V, 4-Pin TSFP-4-1
- Infineon RF Bipolar Transistor 7.5 V, 4-Pin TSFP-4-1