Infineon NPN RF Bipolar Transistor, 50 mA NPN, 4 V, 4-Pin TSFP
- N° de stock RS:
- 216-8351
- Référence fabricant:
- BFP640FH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
684,00 €
(TVA exclue)
828,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 09 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,228 € | 684,00 € |
| 6000 - 6000 | 0,217 € | 651,00 € |
| 9000 + | 0,203 € | 609,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 216-8351
- Référence fabricant:
- BFP640FH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | NPN RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 4V | |
| Package Type | TSFP | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 42GHz | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Minimum DC Current Gain hFE | 110 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 200mW | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP640F | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type NPN RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 4V | ||
Package Type TSFP | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 42GHz | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Minimum DC Current Gain hFE 110 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 200mW | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP640F | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon BFP series is a RF bipolar transistor based on silicon germanium technology. Its transition frequency of 42 GHz and high linearity characteristics at low currents make the device suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost competitive without compromising on ease of use.
Provides outstanding performance for a wide range of wireless applications
Ideal for CDMA and WLAN applications
High maximum stable gain
Gold metallization for extra high reliability
Liens connexes
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