onsemi 1200 V 40 A Rectifier & Schottky Diode Schottky 3-Pin TO-247-3LD NDSH40120CDN
- N° de stock RS:
- 261-9557
- Référence fabricant:
- NDSH40120CDN
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 261-9557
- Référence fabricant:
- NDSH40120CDN
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-247-3LD | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | NDSH40120CDN | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 200μA | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 123A | |
| Maximum Forward Voltage Vf | 1.75V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 15.87mm | |
| Height | 4.82mm | |
| Length | 41.07mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-247-3LD | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series NDSH40120CDN | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 200μA | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 123A | ||
Maximum Forward Voltage Vf 1.75V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 15.87mm | ||
Height 4.82mm | ||
Length 41.07mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-3L
The ON Semiconductor schottky diodes & rectifiers silicon carbide schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to silicon. It consist of no reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets silicon carbide as the next generation of power semiconductor.
High surge current capacity
Positive temperature coefficient
Ease of paralleling
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