onsemi 1200 V 46 A Schottky Diode Schottky 2-Pin TO-247
- N° de stock RS:
- 178-4269
- Référence fabricant:
- FFSH30120A
- Fabricant:
- onsemi
Sous-total (1 tube de 30 unités)*
220,32 €
(TVA exclue)
266,58 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 + | 7,344 € | 220,32 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-4269
- Référence fabricant:
- FFSH30120A
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 46A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | EliteSiC | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Reverse Current Ir | 200μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 150A | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.82mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Mount Type Through Hole | ||
Product Type Schottky Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 46A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series EliteSiC | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Reverse Current Ir 200μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 150A | ||
Maximum Operating Temperature 175°C | ||
Height 20.82mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Length 15.87mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D1, TO-247-2L Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175 °C
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding
Liens connexes
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