onsemi 1200 V 10 A Schottky Diode & Rectifier Merged Pin Schottky 3-Pin TO-247-3 UJ3D1210KSD
- N° de stock RS:
- 648-526
- Référence fabricant:
- UJ3D1210KSD
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 648-526
- Référence fabricant:
- UJ3D1210KSD
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Schottky Diode & Rectifier | |
| Mount Type | Through Hole | |
| Package Type | TO-247-3 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | UJ3 | |
| Diode Configuration | Common Cathode | |
| Rectifier Type | Merged Pin Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 110μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.6V | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.96mm | |
| Length | 15.90mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Schottky Diode & Rectifier | ||
Mount Type Through Hole | ||
Package Type TO-247-3 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series UJ3 | ||
Diode Configuration Common Cathode | ||
Rectifier Type Merged Pin Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 110μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.6V | ||
Maximum Operating Temperature 175°C | ||
Height 20.96mm | ||
Length 15.90mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Easy paralleling
Extremely fast switching not dependent on temperature
No reverse or forward recovery
100% UIS tested
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