Infineon 650 V 2 A Semiconductor Silicon Carbide Diode 5-Pin PG-VSON-4 IDL02G65C5XUMA2

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N° de stock RS:
249-6931
Référence fabricant:
IDL02G65C5XUMA2
Fabricant:
Infineon
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Marque

Infineon

Mount Type

Surface

Product Type

Semiconductor

Package Type

PG-VSON-4

Maximum Continuous Forward Current If

2A

Peak Reverse Repetitive Voltage Vrrm

650V

Series

XDL02G65

Diode Configuration

Single

Rectifier Type

Silicon Carbide Diode

Pin Count

5

Peak Reverse Current Ir

240μA

Minimum Operating Temperature

-55°C

Maximum Forward Voltage Vf

1.7V

Peak Non-Repetitive Forward Surge Current Ifsm

21A

Maximum Operating Temperature

150°C

Standards/Approvals

J-STD20 and JESD22

Automotive Standard

No

The Infineon schottky diode has silicon carbide as revolutionary semiconductor material. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new. It has more compact design and thin-wafer technology.

Revolutionary semiconductor material - Silicon Carbide

Benchmark switching behaviour

No reverse recovery/ No forward recovery

Temperature independent switching behaviour

High surge current capability

Pb-free lead plating

RoHS compliant

Qualified according to JEDEC1 for target applications

Breakdown voltage tested at 4.5 mA2

Optimized for high temperature operation

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