Infineon 650 V 8 A Rectifier & Schottky Diode 5-Pin PG-VSON-4
- N° de stock RS:
- 258-0967
- Référence fabricant:
- IDL08G65C5XUMA2
- Fabricant:
- Infineon
Sous-total (1 bobine de 3000 unités)*
3 672,00 €
(TVA exclue)
4 443,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 3 000 unité(s) expédiée(s) à partir du 05 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 1,224 € | 3 672,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-0967
- Référence fabricant:
- IDL08G65C5XUMA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Mount Type | Surface | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | PG-VSON-4 | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDL08G65C5 | |
| Pin Count | 5 | |
| Maximum Forward Voltage Vf | 1.7V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 43A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Mount Type Surface | ||
Product Type Rectifier & Schottky Diode | ||
Package Type PG-VSON-4 | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDL08G65C5 | ||
Pin Count 5 | ||
Maximum Forward Voltage Vf 1.7V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 43A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon 5th generation thinQ! SiC Schottky diode is proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ!™ generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
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