Infineon 1.2 kV 30 A SiC Diode Schottky 2-Pin TO-247 IDWD30G120C5XKSA1
- N° de stock RS:
- 222-4844
- Référence fabricant:
- IDWD30G120C5XKSA1
- Fabricant:
- Infineon
Bénéficiez d'une remise sur les achats en gros
Ajoutez 5 de plus pour économiser 3,20 €
Consulter les options de prix de grosSous-total (1 unité)*
12,53 €
(TVA exclue)
15,16 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 240 unité(s) expédiée(s) à partir du 14 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | Économie |
|---|---|---|
| 1 - 4 | 12,53 € | - |
| 5 - 9 | 11,89 € | 3,20 € |
| 10 - 24 | 11,40 € | 11,30 € |
| 25 - 49 | 10,91 € | 40,50 € |
| 50 + | 10,16 € | 118,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4844
- Référence fabricant:
- IDWD30G120C5XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Mount Type | SMD | |
| Product Type | SiC Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 30A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Single | |
| Series | 5th Generation CoolSiC 1200V Schottky Diode | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 248μA | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 240A | |
| Maximum Forward Voltage Vf | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.8mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 40.21mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Mount Type SMD | ||
Product Type SiC Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 30A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Single | ||
Series 5th Generation CoolSiC 1200V Schottky Diode | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 248μA | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 240A | ||
Maximum Forward Voltage Vf 1.65V | ||
Maximum Operating Temperature 175°C | ||
Width 15.8mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 40.21mm | ||
Automotive Standard No | ||
Infineon 5th Generation CoolSiC 1200V Schottky Diode Series SiC Diode, 30A Continuous Forward Current, 1200V Peak Reverse Repetitive Voltage - IDWD30G120C5XKSA1
This SiC Schottky diode is a high-voltage rectifier designed for power-conversion environments requiring fast switching and elevated temperature endurance. It operates across a wide ambient range and is supplied in a TO-247 surface-mount package suited to heat-sinking and power-system assembly. The component is intended for use where low forward drop, Rapid recovery and robust surge capability are required.
Features and Benefits:
• 30A continuous forward current reduces heat-related conduction losses
• 1.65V maximum forward voltage lowers conduction power dissipation
• 240A Peak surge capability protects against transient overloads
• 1200V Peak reverse rating enables high-voltage rectification
• 248μA Peak reverse leakage minimises standby reverse losses
• 1.65V maximum forward voltage lowers conduction power dissipation
• 240A Peak surge capability protects against transient overloads
• 1200V Peak reverse rating enables high-voltage rectification
• 248μA Peak reverse leakage minimises standby reverse losses
Applications
• Suitable for 1200V SiC rectifier for power electronics
• Ideal for high-temperature switching up to 175°C
• Used with power modules requiring TO-247 SiC diode high temperature 175°C
• Can be used for designs needing 1200V SiC rectifier diode Ifsm 240A
• Suitable for circuits demanding SiC Schottky 30A 1.65V forward
• Ideal for high-temperature switching up to 175°C
• Used with power modules requiring TO-247 SiC diode high temperature 175°C
• Can be used for designs needing 1200V SiC rectifier diode Ifsm 240A
• Suitable for circuits demanding SiC Schottky 30A 1.65V forward
What temperature range can it operate within?
It is rated to function from -55°C up to 175°C.
How many electrical connections does the device provide?
It features a two-pin configuration for single-diode use.
What package and mounting method does it use?
The device is supplied in a TO-247 package intended for surface mounting.
What standard approvals does the component meet?
It conforms to JEDEC47/20/22 standards.
What is the Peak non-repetitive forward surge capability?
It supports a 240A Peak non-repetitive forward surge current.
Liens connexes
- Infineon 1.2 kV 30 A SiC Diode Schottky 2-Pin TO-247 IDWD30G120C5XKSA1
- Infineon 1.2 kV 8 A Diode SiC Schottky 3-Pin TO-247 IDM08G120C5XTMA1
- Infineon 1.2 kV 10 A Diode SiC Schottky 3-Pin TO-247 IDW10G120C5BFKSA1
- Infineon 1.2 kV 20 A SiC Diode Schottky 2-Pin TO-247 IDWD20G120C5XKSA1
- Infineon 1.2 kV 40 A Diode SiC Schottky 2-Pin TO-247 IDW40G120C5BFKSA1
- Infineon 1.2 kV 20 A SiC Diode Schottky 2-Pin D2PAK IDK20G120C5XTMA1
- Infineon 1.2 kV 2 A Diode SiC Schottky 2-Pin DPAK IDM02G120C5XTMA1
- Infineon 1.2 kV 20 A Diode Schottky 3-Pin TO-247 IDW20G120C5BFKSA1