Infineon 1200 V 10 A Diode SiC Schottky 3-Pin TO-247 IDW10G120C5BFKSA1
- N° de stock RS:
- 222-4834
- Référence fabricant:
- IDW10G120C5BFKSA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 2 unités)*
9,55 €
(TVA exclue)
11,556 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 276 unité(s) expédiée(s) à partir du 02 mars 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 + | 4,775 € | 9,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4834
- Référence fabricant:
- IDW10G120C5BFKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | 5th Generation CoolSiCTM | |
| Diode Configuration | Single | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Height | 21.1mm | |
| Width | 5.21 mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series 5th Generation CoolSiCTM | ||
Diode Configuration Single | ||
Rectifier Type SiC Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Height 21.1mm | ||
Width 5.21 mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance
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