Infineon 1200 V 8 A Diode SiC Schottky 3-Pin TO-247
- N° de stock RS:
- 222-4830
- Référence fabricant:
- IDM08G120C5XTMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 2500 unités)*
2 857,50 €
(TVA exclue)
3 457,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 1,143 € | 2 857,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4830
- Référence fabricant:
- IDM08G120C5XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | 5th Generation thinQ!TM | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 2.85V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 70A | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.65mm | |
| Width | 2.35 mm | |
| Standards/Approvals | JEDEC1) | |
| Height | 10.4mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series 5th Generation thinQ!TM | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Rectifier Type SiC Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 2.85V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 70A | ||
Maximum Operating Temperature 175°C | ||
Length 6.65mm | ||
Width 2.35 mm | ||
Standards/Approvals JEDEC1) | ||
Height 10.4mm | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 8 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance
Liens connexes
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