Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK IDM02G120C5XTMA1
- N° de stock RS:
- 222-4827
- Référence fabricant:
- IDM02G120C5XTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
10,56 €
(TVA exclue)
12,78 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 295 unité(s) expédiée(s) à partir du 06 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 2,112 € | 10,56 € |
| 25 - 45 | 1,774 € | 8,87 € |
| 50 - 120 | 1,666 € | 8,33 € |
| 125 - 245 | 1,54 € | 7,70 € |
| 250 + | 1,436 € | 7,18 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4827
- Référence fabricant:
- IDM02G120C5XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 2A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | 5th Generation thinQ!TM | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.3V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 37A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 10.4mm | |
| Length | 6.65mm | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Width | 2.35 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 2A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series 5th Generation thinQ!TM | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.3V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 37A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 10.4mm | ||
Length 6.65mm | ||
Standards/Approvals J-STD20 and JESD22 | ||
Width 2.35 mm | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Liens connexes
- Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK
- Infineon 1.8 V 10 A SiC Schottky Diode Schottky 3-Pin DPAK
- Infineon 600 V 6 A SiC Schottky Diode Schottky 3-Pin DPAK
- Infineon 1.8 V 10 A SiC Schottky Diode Schottky 3-Pin DPAK IDD10SG60CXTMA2
- Infineon 600 V 6 A SiC Schottky Diode Schottky 3-Pin DPAK IDD06SG60CXTMA2
- Infineon 1200 V 5 A Diode Schottky 2-Pin DPAK
- Infineon 1200 V 5 A Diode Schottky 2-Pin DPAK IDM05G120C5XTMA1
- Infineon 1200 V 20 A SiC Diode Schottky D2PAK