Infineon 1200 V 20 A SiC Diode Schottky D2PAK IDK20G120C5XTMA1
- N° de stock RS:
- 242-5815
- Référence fabricant:
- IDK20G120C5XTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
6,89 €
(TVA exclue)
8,34 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,89 € |
| 10 - 24 | 6,55 € |
| 25 - 49 | 6,41 € |
| 50 - 99 | 6,00 € |
| 100 + | 5,58 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 242-5815
- Référence fabricant:
- IDK20G120C5XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | SiC Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | IDK20G120C5 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 198A | |
| Peak Reverse Current Ir | 123μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type SiC Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series IDK20G120C5 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Peak Non-Repetitive Forward Surge Current Ifsm 198A | ||
Peak Reverse Current Ir 123μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon Schottky diode generation 5 1200 V, 20 A is now available in a D2PAK real 2-pin package. Connecting SiC diodes in parallel and in a small device package, a high efficient system can be achieved while minimizing board space requirement. The elimination of the middle pin reduces a risk of partial discharge at high voltage and high frequency operation.
Zero Qrr leading to no reverse recovery losses
High surge current capability
Real two-pin package with 47 mm creepage and 44 mm clearance distances
Temperature-independent switching behaviour
Low forward voltage even at high operating temperature
Liens connexes
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