Infineon 1.8 V 10 A SiC Schottky Diode Schottky 3-Pin DPAK
- N° de stock RS:
- 249-6926
- Référence fabricant:
- IDD10SG60CXTMA2
- Fabricant:
- Infineon
Sous-total (1 bobine de 2500 unités)*
4 295,00 €
(TVA exclue)
5 197,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 23 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 1,718 € | 4 295,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 249-6926
- Référence fabricant:
- IDD10SG60CXTMA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Mount Type | Surface | |
| Product Type | SiC Schottky Diode | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.8V | |
| Series | XDD10SG60 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 2.1V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 410A | |
| Peak Reverse Current Ir | 860μA | |
| Peak Reverse Recovery Time trr | 10ns | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Mount Type Surface | ||
Product Type SiC Schottky Diode | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1.8V | ||
Series XDD10SG60 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 2.1V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 410A | ||
Peak Reverse Current Ir 860μA | ||
Peak Reverse Recovery Time trr 10ns | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC1 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide as revolutionary semiconductor material. It does not have forward and reverse recovery. It has temperature independent switching behaviour. It has high surge current capability.
Pb-free lead plating
RoHS compliant
Qualified according to JEDEC for target applications
Breakdown voltage tested at 20mA
Optimized for high temperature operation
Lowest Figure of Merit QC/IF
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