STMicroelectronics 1200 V 15 A Diode 2-Pin D2PAK STPSC15H12G2-TR

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Sous-total (1 paquet de 2 unités)*

13,80 €

(TVA exclue)

16,70 €

(TVA incluse)

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Dernier stock RS
  • 996 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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Prix par unité
le paquet*
2 - 86,90 €13,80 €
10 - 186,56 €13,12 €
20 - 485,90 €11,80 €
50 - 985,315 €10,63 €
100 +5,04 €10,08 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
219-4237
Référence fabricant:
STPSC15H12G2-TR
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Mount Type

Surface

Product Type

Diode

Package Type

TO-263

Maximum Continuous Forward Current If

15A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Single

Series

STPSC15H12G2-TR

Pin Count

2

Peak Reverse Current Ir

45μA

Peak Non-Repetitive Forward Surge Current Ifsm

90A

Minimum Operating Temperature

-40°C

Maximum Forward Voltage Vf

2.25V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

15.95mm

Height

4.4mm

Width

10.98 mm

Automotive Standard

No

The STMicroelectronics 15 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.The STPSC15H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

No or negligible reverse recovery

Switching behaviour independent of temperature

Robust high voltage periphery

Operating Tj from -40 °C to 175 °C

Low VF

D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

ECOPACK2 compliant

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