STMicroelectronics 1200 V 20 A Diode 3-Pin D2PAK
- N° de stock RS:
- 228-3057
- Référence fabricant:
- STPSC20H12G2-TR
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 1000 unités)*
7 518,00 €
(TVA exclue)
9 097,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 13 janvier 2027
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 7,518 € | 7 518,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 228-3057
- Référence fabricant:
- STPSC20H12G2-TR
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 120A | |
| Peak Reverse Current Ir | 60μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.3mm | |
| Length | 15.95mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 120A | ||
Peak Reverse Current Ir 60μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.3mm | ||
Length 15.95mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The STMicroelectronics 20 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C