STMicroelectronics 1.2 kV 15 A Diode 2-Pin DPAK HV STPSC15H12G2Y-TR
- N° de stock RS:
- 219-4238
- Référence fabricant:
- STPSC15H12G2Y-TR
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 219-4238
- Référence fabricant:
- STPSC15H12G2Y-TR
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | DPAK HV | |
| Maximum Continuous Forward Current If | 15A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Single | |
| Series | STPSC15H12G2Y-TR | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 45μA | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 90A | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.3mm | |
| Length | 15.95mm | |
| Standards/Approvals | No | |
| Width | 10.58mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type DPAK HV | ||
Maximum Continuous Forward Current If 15A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Single | ||
Series STPSC15H12G2Y-TR | ||
Pin Count 2 | ||
Peak Reverse Current Ir 45μA | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 90A | ||
Maximum Operating Temperature 175°C | ||
Height 4.3mm | ||
Length 15.95mm | ||
Standards/Approvals No | ||
Width 10.58mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics 15 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1.
AEC-Q101 qualified
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
PPAP capable
Operating Tj from -40 °C to 175 °C
D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
ECOPACK2 compliant
Liens connexes
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