STMicroelectronics 1200 V 10 A Diode 2-Pin D2PAK
- N° de stock RS:
- 219-4231
- Référence fabricant:
- STPSC10H12G2-TR
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 1000 unités)*
3 743,00 €
(TVA exclue)
4 529,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 11 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 3,743 € | 3 743,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-4231
- Référence fabricant:
- STPSC10H12G2-TR
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 60A | |
| Peak Reverse Current Ir | 30μA | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 2.25V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.4mm | |
| Width | 10 mm | |
| Standards/Approvals | RoHS | |
| Height | 4.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 60A | ||
Peak Reverse Current Ir 30μA | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 2.25V | ||
Maximum Operating Temperature 175°C | ||
Length 15.4mm | ||
Width 10 mm | ||
Standards/Approvals RoHS | ||
Height 4.3mm | ||
Automotive Standard No | ||
The STMicroelectronics 10 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1. The STPSC10H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C
Low VF
D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
ECOPACK2 compliant
Liens connexes
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