STMicroelectronics 1.2 kV 20 A Diode Schottky 8-Pin HU3PAK STPSC20G12L2Y
- N° de stock RS:
- 365-184
- Référence fabricant:
- STPSC20G12L2Y
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
15,70 €
(TVA exclue)
19,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 196 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 15,70 € |
| 10 - 99 | 14,12 € |
| 100 + | 13,03 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 365-184
- Référence fabricant:
- STPSC20G12L2Y
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | HU3PAK | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Single | |
| Series | STPS | |
| Rectifier Type | Schottky | |
| Pin Count | 8 | |
| Maximum Forward Voltage Vf | 2.1V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 500μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1.1kA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type HU3PAK | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Single | ||
Series STPS | ||
Rectifier Type Schottky | ||
Pin Count 8 | ||
Maximum Forward Voltage Vf 2.1V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 500μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1.1kA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- JP
The STMicroelectronics SiC diode is a ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turnoff behavior is independent of temperature. Based on the latest technology optimization, this diode has an improved forward surge current capability, making it Ideal for use in PFC, where this ST SiC diode will boost the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.
AEC-Q101 qualified and PPAP capable
None or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
ECOPACK2 compliant component
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