STMicroelectronics 650 V 4 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC4G065D
- N° de stock RS:
- 719-664
- Référence fabricant:
- STPSC4G065D
- Fabricant:
- STMicroelectronics
Sous-total (1 unité)*
1,02 €
(TVA exclue)
1,23 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 300 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 + | 1,02 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-664
- Référence fabricant:
- STPSC4G065D
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | STPSC | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 385A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.3V | |
| Peak Reverse Current Ir | 170μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.6mm | |
| Length | 15.75mm | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series STPSC | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 385A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.3V | ||
Peak Reverse Current Ir 170μA | ||
Maximum Operating Temperature 175°C | ||
Height 4.6mm | ||
Length 15.75mm | ||
- Pays d'origine :
- CN
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
None or negligible reverse recovery charge in application current range
Switching behaviour independent of temperature
High forward surge capability
ECOPACK2 compliant component
Liens connexes
- STMicroelectronics 650 V 6 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC6G065D
- STMicroelectronics 650 V 20 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC20G065DY
- STMicroelectronics 650 V 10 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC10G065DY
- STMicroelectronics 650 V 10 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC10G065D
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220 IDH12G65C5XKSA2
- Nexperia 650 V 10 A Diode SiC Schottky 2-Pin TO-220 PSC1065KQ
- STMicroelectronics 650 V 8 A Diode SiC Schottky 2-Pin TO-220AC STPSC8G065D