STMicroelectronics 650 V 10 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC10G065DY
- N° de stock RS:
- 719-660
- Référence fabricant:
- STPSC10G065DY
- Fabricant:
- STMicroelectronics
Sous-total (1 unité)*
2,04 €
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2,47 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 + | 2,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-660
- Référence fabricant:
- STPSC10G065DY
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | STPSC | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 425μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 650A | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.75mm | |
| Height | 4.6mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Schottky Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series STPSC | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 425μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 650A | ||
Maximum Operating Temperature 175°C | ||
Length 15.75mm | ||
Height 4.6mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature Based on latest technology optimization, this diode has an improved forward surge current capability, making it Ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions.
AEC-Q101 qualified and PPAP capable
None or negligible reverse recovery charge in application current range
Switching behaviour independent of temperature
High forward surge capability
ECOPACK2 compliant component
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