BGA5H1BN6E6327XTSA1 Infineon RF Amplifier Low Noise 18.1 dB, 6-Pin 2690 MHz TSNP

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N° de stock RS:
258-0656
Référence fabricant:
BGA5H1BN6E6327XTSA1
Fabricant:
Infineon
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Marque

Infineon

Amplifier Type

Low Noise

Product Type

RF Amplifier

Operating Frequency

2690 MHz

Technology

Silicon Germanium

Gain

18.1dB

Minimum Supply Voltage

1.5V

Package Type

TSNP

Pin Count

6

Maximum Supply Voltage

3.6V

P1dB - Compression Point

60mW

Noise Figure

1.2dB

Third Order Intercept OIP3

-6dBm

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

Series

BGA5H1BN6

The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function

increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.

Low current consumption of 8.5 mA

Multi-state control: Bypass- and high gain-Mode

Ultra small TSNP-6-10 leadless package

RF output internally matched to 50 Ohm

Low external component count

Liens connexes

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