BGA5H1BN6E6327XTSA1 Infineon, RF Amplifier Low Noise, 18.1 dB 2690 MHz, 6-Pin TSNP-6-10
- N° de stock RS:
- 258-0656
- Référence fabricant:
- BGA5H1BN6E6327XTSA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 10 unités)*
2,07 €
(TVA exclue)
2,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 11 990 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 + | 0,207 € | 2,07 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-0656
- Référence fabricant:
- BGA5H1BN6E6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Amplifier Type | Low Noise | |
| Typical Power Gain | 18.1 dB | |
| Typical Output Power | 60mW | |
| Typical Noise Figure | 1.2dB | |
| Maximum Operating Frequency | 2690 MHz | |
| Package Type | TSNP-6-10 | |
| Pin Count | 6 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Amplifier Type Low Noise | ||
Typical Power Gain 18.1 dB | ||
Typical Output Power 60mW | ||
Typical Noise Figure 1.2dB | ||
Maximum Operating Frequency 2690 MHz | ||
Package Type TSNP-6-10 | ||
Pin Count 6 | ||
The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
Low current consumption of 8.5 mA
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
Liens connexes
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