Infineon RF Amplifier Low Noise 18.1 dB, 6-Pin 2690 MHz TSNP
- N° de stock RS:
- 258-0655
- Référence fabricant:
- BGA5H1BN6E6327XTSA1
- Fabricant:
- Infineon
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 258-0655
- Référence fabricant:
- BGA5H1BN6E6327XTSA1
- Fabricant:
- Infineon
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Amplifier Type | Low Noise | |
| Product Type | RF Amplifier | |
| Technology | Silicon Germanium | |
| Gain | 18.1dB | |
| Package Type | TSNP | |
| Minimum Supply Voltage | 1.5V | |
| Pin Count | 6 | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Noise Figure | 1.2dB | |
| P1dB - Compression Point | 60mW | |
| Third Order Intercept OIP3 | -6dBm | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | BGA5H1BN6 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Amplifier Type Low Noise | ||
Product Type RF Amplifier | ||
Technology Silicon Germanium | ||
Gain 18.1dB | ||
Package Type TSNP | ||
Minimum Supply Voltage 1.5V | ||
Pin Count 6 | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Noise Figure 1.2dB | ||
P1dB - Compression Point 60mW | ||
Third Order Intercept OIP3 -6dBm | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Series BGA5H1BN6 | ||
Automotive Standard No | ||
The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
Low current consumption of 8.5 mA
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
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