OSI Optoelectronics Ultraviolet Photodiode, 65 °, Through Hole TO-8
- N° de stock RS:
- 848-6281
- Référence fabricant:
- UV-035EQ
- Fabricant:
- OSI Optoelectronics
Offre groupée disponible
Sous-total (1 unité)*
73,92 €
(TVA exclue)
89,44 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 73,92 € |
| 5 - 9 | 70,88 € |
| 10 + | 69,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 848-6281
- Référence fabricant:
- UV-035EQ
- Fabricant:
- OSI Optoelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | OSI Optoelectronics | |
| Spectrums Detected | Ultraviolet | |
| Product Type | Photodiode | |
| Wavelength of Peak Sensitivity | 720nm | |
| Package Type | TO-8 | |
| Packaging | Tape & Reel | |
| Mount Type | Through Hole | |
| Number of Pins | 2 | |
| Minimum Wavelength Detected | 320nm | |
| Maximum Wavelength Detected | 1100nm | |
| Typical Fall Time | 0.6ns | |
| Minimum Operating Temperature | -25°C | |
| Amplified | No | |
| Maximum Operating Temperature | 85°C | |
| Height | 5.21mm | |
| Length | 8mm | |
| Width | 5mm | |
| Standards/Approvals | RoHS | |
| Angle of Half Sensitivity | 65 ° | |
| Diameter | 13.97mm | |
| Typical Rise Time | 0.6ns | |
| Breakdown Voltage | 30V | |
| Dark Current | 0.2nA | |
| Polarity | Reverse | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque OSI Optoelectronics | ||
Spectrums Detected Ultraviolet | ||
Product Type Photodiode | ||
Wavelength of Peak Sensitivity 720nm | ||
Package Type TO-8 | ||
Packaging Tape & Reel | ||
Mount Type Through Hole | ||
Number of Pins 2 | ||
Minimum Wavelength Detected 320nm | ||
Maximum Wavelength Detected 1100nm | ||
Typical Fall Time 0.6ns | ||
Minimum Operating Temperature -25°C | ||
Amplified No | ||
Maximum Operating Temperature 85°C | ||
Height 5.21mm | ||
Length 8mm | ||
Width 5mm | ||
Standards/Approvals RoHS | ||
Angle of Half Sensitivity 65 ° | ||
Diameter 13.97mm | ||
Typical Rise Time 0.6ns | ||
Breakdown Voltage 30V | ||
Dark Current 0.2nA | ||
Polarity Reverse | ||
Automotive Standard No | ||
OSI UV Enhanced Series Photodiodes
The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV region of the electromagnetic spectrum.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
Features of the UV Enhanced series:
Inversion layers or planar diffused silicon photodiodes
Excellent UV response
Photodiodes, OSI Optoelectronics
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