OSI Optoelectronics Ultraviolet Photodiode, 65 °, Through Hole Ceramic package
- N° de stock RS:
- 848-6294
- Référence fabricant:
- PIN-UV-100DQC
- Fabricant:
- OSI Optoelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
195,52 €
(TVA exclue)
236,58 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 15 unité(s) expédiée(s) à partir du 28 septembre 2026
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 195,52 € |
| 5 - 9 | 192,20 € |
| 10 + | 189,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 848-6294
- Référence fabricant:
- PIN-UV-100DQC
- Fabricant:
- OSI Optoelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | OSI Optoelectronics | |
| Product Type | Photodiode | |
| Spectrums Detected | Ultraviolet | |
| Wavelength of Peak Sensitivity | 980nm | |
| Package Type | Ceramic package | |
| Packaging | Tape & Reel | |
| Mount Type | Through Hole | |
| Number of Pins | 2 | |
| Minimum Wavelength Detected | 190nm | |
| Maximum Wavelength Detected | 1100nm | |
| Typical Fall Time | 0.6ns | |
| Amplified | No | |
| Minimum Operating Temperature | -25°C | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | RoHS | |
| Height | 2.03mm | |
| Length | 16.51mm | |
| Width | 14.99mm | |
| Angle of Half Sensitivity | 65 ° | |
| Typical Rise Time | 0.6ns | |
| Breakdown Voltage | 30V | |
| Dark Current | 0.2nA | |
| Polarity | Reverse | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque OSI Optoelectronics | ||
Product Type Photodiode | ||
Spectrums Detected Ultraviolet | ||
Wavelength of Peak Sensitivity 980nm | ||
Package Type Ceramic package | ||
Packaging Tape & Reel | ||
Mount Type Through Hole | ||
Number of Pins 2 | ||
Minimum Wavelength Detected 190nm | ||
Maximum Wavelength Detected 1100nm | ||
Typical Fall Time 0.6ns | ||
Amplified No | ||
Minimum Operating Temperature -25°C | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals RoHS | ||
Height 2.03mm | ||
Length 16.51mm | ||
Width 14.99mm | ||
Angle of Half Sensitivity 65 ° | ||
Typical Rise Time 0.6ns | ||
Breakdown Voltage 30V | ||
Dark Current 0.2nA | ||
Polarity Reverse | ||
Automotive Standard No | ||
- Pays d'origine :
- US
OSI UV Enhanced Series Photodiodes
The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV region of the electromagnetic spectrum.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
Features of the UV Enhanced series:
Inversion layers or planar diffused silicon photodiodes
Excellent UV response
Photodiodes, OSI Optoelectronics
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