OSI Optoelectronics UV-100L Infrared Photodiode, 65 °, Through Hole
- N° de stock RS:
- 176-9786
- Référence fabricant:
- UV-100L
- Fabricant:
- OSI Optoelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
181,03 €
(TVA exclue)
219,05 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 29 mars 2027
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 181,03 € |
| 5 - 9 | 171,62 € |
| 10 - 24 | 163,10 € |
| 25 + | 156,96 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 176-9786
- Référence fabricant:
- UV-100L
- Fabricant:
- OSI Optoelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | OSI Optoelectronics | |
| Spectrums Detected | Infrared | |
| Product Type | Photodiode | |
| Wavelength of Peak Sensitivity | 254nm | |
| Packaging | Tape & Reel | |
| Mount Type | Through Hole | |
| Number of Pins | 3 | |
| Maximum Wavelength Detected | 254nm | |
| Typical Fall Time | 0.6ns | |
| Amplified | No | |
| Minimum Operating Temperature | -25°C | |
| Maximum Operating Temperature | 85°C | |
| Length | 24.76mm | |
| Standards/Approvals | RoHS | |
| Width | 5mm | |
| Height | 4.826mm | |
| Diameter | 25.4mm | |
| Angle of Half Sensitivity | 65 ° | |
| Series | UV | |
| Automotive Standard | No | |
| Typical Rise Time | 5.9ns | |
| Breakdown Voltage | 30V | |
| Polarity | Forward | |
| Dark Current | 500pA | |
| Sélectionner tout | ||
|---|---|---|
Marque OSI Optoelectronics | ||
Spectrums Detected Infrared | ||
Product Type Photodiode | ||
Wavelength of Peak Sensitivity 254nm | ||
Packaging Tape & Reel | ||
Mount Type Through Hole | ||
Number of Pins 3 | ||
Maximum Wavelength Detected 254nm | ||
Typical Fall Time 0.6ns | ||
Amplified No | ||
Minimum Operating Temperature -25°C | ||
Maximum Operating Temperature 85°C | ||
Length 24.76mm | ||
Standards/Approvals RoHS | ||
Width 5mm | ||
Height 4.826mm | ||
Diameter 25.4mm | ||
Angle of Half Sensitivity 65 ° | ||
Series UV | ||
Automotive Standard No | ||
Typical Rise Time 5.9ns | ||
Breakdown Voltage 30V | ||
Polarity Forward | ||
Dark Current 500pA | ||
Statut RoHS : Exempté
- Pays d'origine :
- US
OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer structure UV enhanced photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with 5 to 10 volts applied reverse bias.
Product Applications
Pollution Monitoring
Medical Instrumentation
UV Exposure Meters
Spectroscopy
Water Purification
Fluorescence
Product Features
Inversion series: 100% Internal QE
Ultra High Shunt Resistance
Excellent UV Response
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