Infineon HEXFET Type N-Channel MOSFET, 86 A, 55 V Enhancement, 3-Pin TO-263 IRL3705ZSTRLPBF
- N° de stock RS:
- 915-5073
- Référence fabricant:
- IRL3705ZSTRLPBF
- Fabricant:
- Infineon
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12,024 €
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14,552 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 8 + | 1,503 € | 12,02 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 915-5073
- Référence fabricant:
- IRL3705ZSTRLPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 86A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 130W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Width | 11.3 mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 86A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 130W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Width 11.3 mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263