Infineon HEXFET N-Channel MOSFET, 32 A, 100 V Enhancement, 3-Pin TO-252 IRFR3411TRPBF
- N° de stock RS:
- 915-5014
- Référence fabricant:
- IRFR3411TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 20 unités)*
24,24 €
(TVA exclue)
29,34 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 1 040 unité(s) expédiée(s) à partir du 02 novembre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 20 | 1,212 € | 24,24 € |
| 40 - 80 | 1,151 € | 23,02 € |
| 100 - 180 | 1,103 € | 22,06 € |
| 200 - 480 | 1,031 € | 20,62 € |
| 500 + | 0,97 € | 19,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 915-5014
- Référence fabricant:
- IRFR3411TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Power Dissipation Pd | 130W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Width | 7.49mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Power Dissipation Pd 130W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Width 7.49mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 32A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRFR3411TRPBF
This MOSFET is crucial for high-power electronic applications, delivering robust performance with low on-resistance and a wide operating temperature range. Utilising HEXFET technology, it ensures efficient operation, making it suitable for various industrial and automation tasks. Its surface-mount DPAK (TO-252) package facilitates easy integration into electronic circuits, while the enhancement mode design optimises switching efficiency.
Features & Benefits
• Continuous drain current capability of 32A for versatile applications
• Maximum voltage rating of 100V for flexible usage
• Low RDS(on) of 44mΩ reduces power loss and heat generation
• Maximum power dissipation of 130W for enhanced durability
• Supports high-speed switching for improved circuit performance
• Surface mounting design simplifies PCB integration
Applications
• Utilised in DC-DC converters within industrial power supply systems
• Effective for motor control circuits in robotics and automation
• Suitable for power management in telecommunications equipment
• Employed in electronic lighting systems for energy efficiency
What type of PCB mounting methods are compatible with this device?
It is designed for surface mounting using vapour phase, infrared, or wave soldering techniques, ensuring versatility in assembly methods.
Can this device handle pulsed drain currents?
Yes, it is rated for pulsed drain currents up to 110A, allowing flexibility in transient load conditions without damage.
What is the thermal resistance for this component?
The junction-to-case thermal resistance is 1.2°C/W, enabling effective heat management during operation.
What temperature range can it operate in?
This MOSFET operates effectively between -55°C and +175°C, suited for extreme environmental conditions.
How does the gate charge impact performance?
With a typical gate charge of 48nC at 10V, it ensures faster switching times, reducing losses and improving efficiency in circuits.
Liens connexes
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