Infineon HEXFET Type N-Channel MOSFET, 8.7 A, 100 V Enhancement, 3-Pin TO-252
- N° de stock RS:
- 215-2596
- Référence fabricant:
- IRFR120ZTRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 bobine de 2000 unités)*
384,00 €
(TVA exclue)
464,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 6 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 - 2000 | 0,192 € | 384,00 € |
| 4000 - 4000 | 0,182 € | 364,00 € |
| 6000 + | 0,171 € | 342,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-2596
- Référence fabricant:
- IRFR120ZTRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET® Power MOSFET series utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead free
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IRFR120ZTRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement TO-252 IRFR3410TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IRFR4510TRPBF