Infineon HEXFET Type N-Channel MOSFET, 63 A, 100 V Enhancement, 3-Pin TO-252

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Sous-total (1 bobine de 2000 unités)*

1 442,00 €

(TVA exclue)

1 744,00 €

(TVA incluse)

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Dernier stock RS
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la bobine*
2000 +0,721 €1 442,00 €

*Prix donné à titre indicatif

N° de stock RS:
145-9568
Référence fabricant:
IRFR4510TRPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13.9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

54nC

Maximum Power Dissipation Pd

143W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

2.39mm

Length

6.73mm

Width

7.49 mm

Standards/Approvals

No

Automotive Standard

No

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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