Infineon HEXFET Type P-Channel MOSFET, 15 A, 30 V Enhancement, 8-Pin SOIC IRF9321TRPBF

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Offre groupée disponible

Sous-total (1 paquet de 20 unités)*

10,88 €

(TVA exclue)

13,16 €

(TVA incluse)

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Dernier stock RS
  • 6 120 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité
Prix par unité
le paquet*
20 - 800,544 €10,88 €
100 - 4800,351 €7,02 €
500 - 9800,316 €6,32 €
1000 - 24800,28 €5,60 €
2500 +0,259 €5,18 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
915-4982
Référence fabricant:
IRF9321TRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

65nC

Maximum Operating Temperature

150°C

Length

5mm

Height

1.5mm

Width

4 mm

Standards/Approvals

No

Automotive Standard

No

P-Channel Power MOSFET 30V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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