Infineon Single LogicFET 1 Type N, Type N-Channel MOSFET, 104 A, 55 V Enhancement, 3-Pin TO-220AB IRL2505PBF

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N° de stock RS:
913-3869
Référence fabricant:
IRL2505PBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N, Type N

Maximum Continuous Drain Current Id

104A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220AB

Series

LogicFET

Mount Type

Through Hole, Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

130nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

200W

Forward Voltage Vf

1.3V

Transistor Configuration

Single

Maximum Operating Temperature

175°C

Height

8.77mm

Standards/Approvals

No

Length

10.54mm

Number of Elements per Chip

1

Automotive Standard

No

Pays d'origine :
CN

Infineon LogicFET Series MOSFET, 104A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL2505PBF


This MOSFET is designed for high-performance applications that require efficient energy management. With a maximum continuous drain current of 104A and a drain-source voltage capability of up to 55V, it is a competitive option for the market. Its robust construction and advanced specifications make it suitable for various automation and electronic applications.

Features & Benefits


• Low on-resistance of 8mΩ reduces heat generation

• Maximum power dissipation of 200 W enhances performance

• Through-hole mounting style allows for easier integration

• Low gate charge requirement improves operational efficiency

• Enhancement mode design ensures performance in challenging conditions

Applications


• Power switching for effective control

• Motor driving circuits for speed and torque regulation

• Automated systems requiring high current management

• Power supplies and conversion circuits to maintain stable output

• Industrial machinery for enhanced power handling

What is the gate threshold voltage for use?


The gate threshold voltage is between 1V and 2V, providing flexibility for various applications.

How does temperature affect performance?


This device can operate effectively within a temperature range of -55°C to +175°C, making it suitable for harsh environmental conditions.

Can it handle pulsed current operations?


Yes, it can manage pulsed drain currents up to 360A, ensuring reliability during short-duration applications.

What level of voltage can be managed across the drain-source?


It supports a maximum voltage of 55V, which is ideal for most general-purpose applications.

N-Channel Power MOSFET 55V, Infineon


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MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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