Infineon OptiMOS 3 Type N-Channel MOSFET, 90 A, 60 V Enhancement, 7-Pin WDSON BSB028N06NN3GXUMA1

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10,98 €

(TVA exclue)

13,285 €

(TVA incluse)

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Prix par unité
le paquet*
5 +2,196 €10,98 €

*Prix donné à titre indicatif

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N° de stock RS:
906-4306
Référence fabricant:
BSB028N06NN3GXUMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS 3

Package Type

WDSON

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

2.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

108nC

Maximum Power Dissipation Pd

78W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

5.05 mm

Height

0.53mm

Length

6.35mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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