Infineon OptiMOS Type N-Channel MOSFET, 50 A, 80 V Enhancement, 7-Pin MG-WDSON

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N° de stock RS:
214-8966
Référence fabricant:
BSB104N08NP3GXUSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS

Package Type

MG-WDSON

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

10.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

23nC

Maximum Power Dissipation Pd

42W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.05mm

Height

0.7mm

Automotive Standard

No

The Infineon range of OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These consists of range of energy efficient MOSFET transistors, in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces.

Low parasitic inductance

Optimized technology for DC/DC converters

Dual sided cooling

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