Infineon CoolMOS CFD Type N-Channel MOSFET, 43 A, 700 V Enhancement, 3-Pin TO-247 IPW65R080CFDAFKSA1
- N° de stock RS:
- 898-6927
- Référence fabricant:
- IPW65R080CFDAFKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
7,04 €
(TVA exclue)
8,52 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 12 unité(s) expédiée(s) à partir du 23 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 4 | 7,04 € |
| 5 - 9 | 6,70 € |
| 10 - 24 | 6,55 € |
| 25 - 49 | 6,13 € |
| 50 + | 5,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 898-6927
- Référence fabricant:
- IPW65R080CFDAFKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS CFD | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 167nC | |
| Maximum Power Dissipation Pd | 391W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Width | 5.21 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS CFD | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 167nC | ||
Maximum Power Dissipation Pd 391W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 21.1mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Width 5.21 mm | ||
Automotive Standard AEC-Q101 | ||
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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