Infineon CoolMOS CFD N-Channel MOSFET, 11.4 A, 700 V, 3-Pin TO-247 IPW65R310CFDFKSA1

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Indisponible
RS n'aura plus ce produit en stock.
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N° de stock RS:
897-7646
Référence fabricant:
IPW65R310CFDFKSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

700 V

Package Type

TO-247

Series

CoolMOS CFD

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

310 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

104.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Typical Gate Charge @ Vgs

41 nC @ 10 V

Width

21.1mm

Length

16.13mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

5.21mm

Infineon CoolMOS™ CFD Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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