Infineon CoolMOS CFD N-Channel MOSFET, 11 A, 700 V, 3-Pin TO-220FP IPA65R310CFDXKSA1
- N° de stock RS:
- 857-8627
- Référence fabricant:
- IPA65R310CFDXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 500 unités)*
582,00 €
(TVA exclue)
704,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 500 - 500 | 1,164 € | 582,00 € |
| 1000 - 2000 | 1,135 € | 567,50 € |
| 2500 + | 1,106 € | 553,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 857-8627
- Référence fabricant:
- IPA65R310CFDXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 700 V | |
| Series | CoolMOS CFD | |
| Package Type | TO-220FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 310 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 32 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 41 nC @ 10 V | |
| Length | 10.65mm | |
| Width | 4.85mm | |
| Transistor Material | Si | |
| Height | 16.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 700 V | ||
Series CoolMOS CFD | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 310 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 32 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 41 nC @ 10 V | ||
Length 10.65mm | ||
Width 4.85mm | ||
Transistor Material Si | ||
Height 16.15mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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