Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220AB IRFB4110GPBF
- N° de stock RS:
- 865-5807
- Référence fabricant:
- IRFB4110GPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 2 unités)*
8,74 €
(TVA exclue)
10,58 €
(TVA incluse)
Ajouter 20 unités pour bénéficier d'une livraison gratuite
Dernier stock RS
- 14 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- 146 unité(s) finale(s) expédiée(s) à partir du 24 février 2026
Unité | Prix par unité | le tube* |
|---|---|---|
| 2 - 8 | 4,37 € | 8,74 € |
| 10 - 18 | 4,15 € | 8,30 € |
| 20 - 48 | 3,985 € | 7,97 € |
| 50 - 98 | 3,805 € | 7,61 € |
| 100 + | 3,06 € | 6,12 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 865-5807
- Référence fabricant:
- IRFB4110GPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 370W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 16.51mm | |
| Width | 4.83 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 370W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 16.51mm | ||
Width 4.83 mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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