Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220AB IRFB4110GPBF
- N° de stock RS:
- 865-5807
- Référence fabricant:
- IRFB4110GPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 2 unités)*
8,74 €
(TVA exclue)
10,58 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 160 unité(s) expédiée(s) à partir du 19 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 2 - 8 | 4,37 € | 8,74 € |
| 10 - 18 | 4,15 € | 8,30 € |
| 20 - 48 | 3,985 € | 7,97 € |
| 50 - 98 | 3,805 € | 7,61 € |
| 100 + | 3,06 € | 6,12 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 865-5807
- Référence fabricant:
- IRFB4110GPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 370W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83 mm | |
| Height | 16.51mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 370W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.83 mm | ||
Height 16.51mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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