Infineon HEXFET N-Channel MOSFET, 92 A, 30 V Enhancement, 3-Pin TO-220AB IRLB8748PBF
- N° de stock RS:
- 725-9329
- Référence fabricant:
- IRLB8748PBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
6,06 €
(TVA exclue)
7,34 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 825 unité(s) expédiée(s) à partir du 19 octobre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 1,212 € | 6,06 € |
| 25 - 45 | 1,15 € | 5,75 € |
| 50 - 120 | 1,036 € | 5,18 € |
| 125 - 245 | 0,932 € | 4,66 € |
| 250 + | 0,886 € | 4,43 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 725-9329
- Référence fabricant:
- IRLB8748PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 92A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 370W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 9.02mm | |
| Standards/Approvals | No | |
| Width | 4.83mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 92A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 370W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 9.02mm | ||
Standards/Approvals No | ||
Width 4.83mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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