onsemi UniFET Type N-Channel MOSFET, 52 A, 200 V Enhancement, 3-Pin TO-263 FDB52N20TM

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Pénurie d'approvisionnement
En raison d'une pénurie d'approvisionnement mondial, nous ne savons pas quand ce produit sera à nouveau en stock.
Options de conditionnement :
N° de stock RS:
759-8983
Référence fabricant:
FDB52N20TM
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

UniFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

49mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

49nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

357W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

9.98mm

Width

10.16 mm

Height

4.572mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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