onsemi UniFET Type N-Channel MOSFET, 6.2 A, 250 V Enhancement, 3-Pin TO-252 FDD7N25LZTM

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Sous-total (1 ruban de 10 unités)*

7,57 €

(TVA exclue)

9,16 €

(TVA incluse)

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  • 3 600 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité
Prix par unité
le ruban*
10 - 900,757 €7,57 €
100 - 2400,653 €6,53 €
250 - 4900,566 €5,66 €
500 - 9900,498 €4,98 €
1000 +0,452 €4,52 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
809-0931
Référence fabricant:
FDD7N25LZTM
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6.2A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-252

Series

UniFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

570mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

12nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

56W

Maximum Operating Temperature

150°C

Width

6.22 mm

Length

6.73mm

Standards/Approvals

No

Height

2.39mm

Automotive Standard

No

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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